6ES7135-0HF01-0XB0 |5SHY5045L0020|模拟电子模块|

6ES7135-0HF01-0XB0 是模拟电子模块，用于 ET 200B 分布式 I/O 系统，提供 4 个模拟输出通道，可以是电压或电流输出。这个模块的电压输出范围是 0 到 10V 和 -10V 到 +10V，具有 11 位的分辨率，并且具备短路保护功能。电流输出范围是 0 到 20mA 和 4 到 20mA。该模块还具备多种其他功能和规格，适用于多种工业应用场景

PN结的单向导电性

当外加电压使PN结中P区的电位高于N区的电位，称为加正向电压，简称正偏;反之称为加反向电压，简称反偏。

(1)PN结加正向电压时:低电阻、大的正向扩散电流。

(2)PN结加反向电压时:高电阻、很小的反向漂移电流。

当PN结处于正向偏置时，扩散运动使多数载流子穿过PN结，在对方区域PN结附近有高于正常情况时的电荷累积。存储电荷量的大小,。

取决于PN结上所加正向电压值的大小。离结越远，由于空穴与电子的复合，浓度将随之减小。

若外加正向电压有一增量V，则相应的空穴(电子)扩散运动在结的附近产生一电荷增量^Q，二者之比^Q/^V为扩散电容Cd.

6ES7135-0HF01-0XB0 is an analog electronics module for ET 200B distributed I/O systems that provides 4 analog output channels, which can be voltage or current outputs. The module has a voltage output range of 0 to 10V and -10V to +10V, an 11-bit resolution, and short-circuit protection. Current output ranges are 0 to 20mA and 4 to 20mA. The module also has a variety of other features and specifications for a variety of industrial application scenarios

Unidirectional conductivity of PN junction

When the applied voltage makes the potential in the P region of the PN junction higher than the potential in the N region, it is called the positive voltage, referred to as positive bias; On the contrary, it is called adding reverse voltage, referred to as reverse bias.

(1)PN junction with forward voltage: low resistance, large forward diffusion current.

(2)PN junction with reverse voltage: high resistance, small reverse drift current.

When the PN junction is in forward bias, the diffusion motion causes most carriers to pass through the PN junction, and there is higher than normal charge accumulation near the PN junction in the other region. The magnitude of the stored charge,.

It depends on the value of the forward voltage applied to the PN junction. The further away from the junction, the concentration will decrease due to the recombination of holes and electrons.

If the applied forward voltage has an incremental V, then the corresponding hole (electron) diffusion motion produces an incremental charge ^Q near the junction, the ratio of the two ^Q/^V is the diffusion capacitance Cd.