5SHY3545L0016 3BHB020720R0002 3BHE039203R0101 GVC736CE101 | 晶闸管(IGCT)模块
型号：5SHY3545L0014 3BHB013085R0001
类别：晶闸管(IGCT)模块
成色：全新/非全新
货期：现货
质保：一年
快递：顺丰/德邦
付款：电汇， 西联汇款
晶闸管(IGCT)模块，即集成门极换流晶闸管模块，是一种结合了晶体管的稳定关断能力和晶闸管低通态损耗优点的混合型电力半导体器件。IGCT模块通过将GTO(门极可关断晶闸管)芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，实现了高压大功率低频交流器的优选方案。IGCT模块具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，且成本低、成品率高，具有很好的应用前景。
二、工作原理
5SHY3545L0014 3BHB013085R0001 IGCT模块的工作原理是通过对内部PN结区域施加正向电压，将PN结区域中的空穴和电子注入到N型感应层和P型感应层中，形成感应电流。同时，在IGCT的门控电极上施加一定的电压信号，通过控制PN结区域中的空穴和电子的复合和推移，控制整个器件的导通和截止。具体来说，当IGCT的阴极接地、阳极接正电压时，PN结区域中的空穴和电子被注入到N型感应层和P型感应层中，形成感应电流。如果在门极上施加一定的正向电压，会在PN结区域中形成一个正向电场，促使电子和空穴向中间汇集，从而推迟PN结区域的耗散时间，使整个器件保持导通状态。反之，如果在门极上施加负向电压或者断开门极电源，PN结区域中的电子和空穴会快速复合和推移，从而截止整个器件的导通。
5SHY3545L0014 3BHB013085R0001 晶闸管(IGCT)模块广泛应用于各种设备或场所中，包括但不限于：
电力控制设备：如变频器、调速器、电机控制器等，用于实现电力控制，如交流电的整流、逆变等。
工业电子设备：如PLC(可编程逻辑控制器)、DCS(分布式控制系统)、传感器等，用于实现信号的采集、处理和输出，以实现自动化控制和监测。
通信设备：5SHY3545L0014 3BHB013085R0001 如交换机、路由器、基站等，用于实现信号的调制、解调、放大等处理，以实现信号的传输和接收。
5SHY3545L0016 3BHB020720R0002 3BHE039203R0101 GVC736CE101 | Thyristor (IGCT) module
Model: 5SHY3545L0014 3BHB013085R0001
Category: Thyristor (IGCT) modules
Finish: New/not new
Delivery time: from stock
Warranty: One year
Express: SF Express/Debon
Payment: Wire transfer, Western Union
Thyristor (IGCT) module, also known as integrated gate commutated thyristor module, is a hybrid power semiconductor device which combines the stable switching ability of transistor with the advantage of low on-state loss of thyristor. The IGCT module integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects the gate driver with low inductance at the periphery, which realizes the optimal scheme of high voltage and high power low frequency alternator. IGCT module has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect.
Second, the working principle
5SHY3545L0014 3BHB013085R0001 IGCT module works by applying a forward voltage to the internal PN junction region, injecting holes and electrons in the PN junction region into the N-type induction layer and P-type induction layer to form an induction current. At the same time, a certain voltage signal is applied to the gated electrode of IGCT to control the on-off and cutoff of the whole device by controlling the recombination and displacement of holes and electrons in the PN junction region. Specifically, when the cathode of IGCT is grounded and the anode is connected with a positive voltage, the holes and electrons in the PN junction region are injected into the N-type induction layer and P-type induction layer to form an induction current. If a certain forward voltage is applied to the gate, a forward electric field will be formed in the PN junction region, prompting electrons and holes to converge to the middle, thus delaying the dissipation time of the PN junction region and keeping the whole device on. Conversely, if a negative voltage is applied to the gate or the gate power supply is disconnected, the electrons and holes in the PN junction region will rapidly recombine and shift, thus cutting off the conduction of the entire device.
5SHY3545L0014 3BHB013085R0001 Thyristor (IGCT) modules are used in a wide variety of devices or locations, including but not limited to:
Power control equipment: such as frequency converter, governor, motor controller, etc., used to achieve power control, such as AC rectification, inverter, etc.
Industrial electronic equipment: such as PLC (programmable logic controller), DCS (distributed control system), sensors, etc., used to achieve signal acquisition, processing and output to achieve automatic control and monitoring.
Communication equipment: 5SHY3545L0014 3BHB013085R0001 Such as switches, routers, base stations, etc., used to realize signal modulation, demodulation, amplification and other processing to achieve signal transmission and reception.
