3BHB017688R001 | IGBT电源模块 | SNAT607 MCI | NTAI06

　　型号：3BHB017688R001

　　类别：IGBT电源模块

　　成色：全新/非全新

　　质保：一年

　　快递：顺丰/德邦

　　IGBT电源模块是电力电子领域中一种重要的功率半导体器件。以下是关于IGBT电源模块的详细介绍：

　　定义与组成：

　　IGBT(Insulated Gate Bipolar Transistor)即绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件。

　　3BHB017688R001 它兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。

　　工作原理：

　　当加在IGBT的栅极上的控制信号为高电平时，栅极与源极之间的耦合电容充电，导致栅极驱动电路通电。此时，栅极电压高于临界电压，使得栅极P-N结反偏，进而阻断P型区中的电流流动，IGBT处于关闭状态。

　　当控制信号变为低电平时，栅极与源极之间的电容开始放电，导致栅极电压降低。当栅极电压降低到临界电压以下时，栅极P-N结反向击穿，来自上方的N型电子开始向下注入P型区，P型区中的电流开始流动，IGBT处于导通状态。

　　应用领域：

　　3BHB017688R001 IGBT模块广泛应用于交流电源、电机驱动、逆变器等领域。

　　非常适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。

　　优点：

　　高效率：IGBT具有较低的导通电阻，可以实现高效率的功率调节。

　　高速开关：IGBT可在短时间内完成开关操作，适用于高频电路。

　　3BHB017688R001 | IGBT power module | SNAT607 MCI | NTAI06

　　Model: 3BHB017688R001

　　Category: IGBT power module

　　Finish: New/not new

　　Warranty: One year

　　Express: SF Express/Debon

　　IGBT power module is an important power semiconductor device in the field of power electronics. The following is a detailed introduction to the IGBT power module:

　　Definition and composition:

　　IGBT (Insulated Gate Bipolar Transistor) is a compound fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect tube).

　　3BHB017688R001 It has the advantages of both the high input impedance of MOSFET and the low on-voltage drop of GTR.

　　How it works:

　　When the control signal added to the gate of the IGBT is high voltage, the coupling capacitor between the gate and the source is charged, and the 3BHB017688R001 grid driver circuit is powered on. At this time, the gate voltage is higher than the critical voltage, which causes the P-N junction of the gate to reverse bias, thus blocking the current flow in the P-type region, and the IGBT is in the off state.

　　When the control signal becomes low, the capacitor between the gate and the source begins to discharge, resulting in a decrease in the gate voltage. When the grid voltage drops below the critical voltage, the P-N junction of the grid reverses, N-type electrons from above begin to inject downward into the P-type region, the current in the P-type region begins to flow, and the IGBT is in a conducting state.

　　Application field:

　　3BHB017688R001 IGBT module is widely used in AC power supply, motor driver, inverter and other fields.

　　Very suitable for DC voltage 600V and above converter system, such as AC motor, inverter, switching power supply, lighting circuit, traction drive and other fields.

　　Advantages:

　　High efficiency: The IGBT has a low on-resistance and can achieve high efficiency power regulation.

　　High-speed switch: IGBT can complete the switching operation in a short time, suitable for high-frequency circuits.