3BHE039724R0C3D PPD513AOC-100440 \ 集成栅极换向晶体管
型号：3BHE039724R0C3D PPD513AOC-100440
类别：集成栅极换向晶体管
质保：365天
货期：3-5天/周
产品净厚度/长度：114.3 毫米
通信协议：PROFIBUS DP
传输速率：960 kbps、1.5 Mbps、3 Mbps
节点地址：0 至 255
电源电压：24 VDC
功耗：< 5 W
3BHE039724R0C3D PPD513AOC-100440 集成栅极换向晶体管(IGCT)是一种先进的电力半导体器件，以下是关于它的详细介绍：
定义与结构：
集成栅极换流晶闸管(Intergrated Gate Commutated Thyristors，简称IGCT)是1996年问世的新型电力半导体器件，专为巨型电力电子成套装置设计。
它基于GTO(门极可关断晶闸管)结构，并采用了集成栅极结构进行栅极硬驱动，同时结合了缓冲层技术及阳极透明发射极技术。
特点与优势：
IGCT结合了晶闸管的通态特性和晶体管的开关特性，拥有低通态压降、高阻断电压和稳定的开关特性。
由于采用了缓冲结构和浅层发射极技术，IGCT的动态损耗降低了约50%。
在一个芯片上集成了具有良好动态响应的续流二极管，实现了晶闸管与晶体管的性能有机结合。
应用与影响：
3BHE039724R0C3D PPD513AOC-100440 IGCT使得变流装置在功率、可靠性、开关速度、效率、成本、体积和重量等方面取得了显著进步，为电力电子成套装置带来了革新。
该器件具有电流大、电压高、开关频率高、可靠性高等特点，同时结构紧凑、损耗低，且制造成本低、成品率高，显示出良好的应用前景。
Model: 3BHE039724R0C3D PPD513AOC-100440
Category: Integrated gate commutator transistor
Warranty: 365 days
Delivery time: 3-5 days/week
Net product thickness/length: 114.3 mm
Communication protocol: PROFIBUS DP
Transmission rate: 960 kbps, 1.5 Mbps, 3 Mbps
Node addresses: 0 to 255
Power supply voltage: 24 VDC
Power consumption: < 5 W
3BHE039724R0C3D PPD513AOC-100440 Integrated gate commutator transistor (IGCT) is an advanced power semiconductor device, the following is a detailed introduction about it:
Definition and structure:
Intergrated Gate Commutated Thyristors (IGCT) are a new type of power semiconductor device introduced in 1996, designed for large power electronics packages.
It is based on GTO (gate turn-off thyristor) structure, and adopts integrated gate structure to drive the gate hard, combined with buffer layer technology and anode transparent emitter technology.
Features and advantages:
The 3BHE039724R0C3D PPD513AOC-100440 IGCT combines the on-state characteristics of thyristors and the switching characteristics of transistors, with low on-state voltage drop, high blocking voltage and stable switching characteristics.
Because of the buffer structure and shallow emitter technology, the dynamic loss of IGCT is reduced by about 50%.
The continuous current diode with good dynamic response is integrated on a chip, and the performance of thyristor and transistor is organically combined.
Application and impact:
The 3BHE039724R0C3D PPD513AOC-100440 IGCT has made significant progress in terms of power, reliability, switching speed, efficiency, cost, volume and weight, and has brought innovation to power electronics packages.
The device has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low manufacturing cost, high yield, and shows a good application prospect.
