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5SHY4045L0001 3BHB018162R0001​ 集成栅极换流晶闸管

>>>>>型号:5SHY4045L0001 3BHB018162R0001 集成栅极换流晶闸管 【功能描述】 5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管5SHY4045L0001 3BHB018162R0001是将GTO芯片与反并联二极管和栅极驱动电路集成在一起,再与其栅极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和

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>>>>>型号:5SHY4045L0001 3BHB018162R0001 集成栅极换流晶闸管

   

【功能描述】

 

5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管

5SHY4045L0001 3BHB018162R0001是将GTO芯片与反并联二极管和栅极驱动电路集成在一起,再与其栅极驱动器在外围以低电感方式连接,结合

了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能,关断阶段呈现晶体管的特性。

IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一 种基于GTO结构、利用集成栅极结构进行栅极硬驱动、

采用缓冲层结构及阳极透明发射极技术的新型大功

半导体开关器件,具有晶闸管的通态特性及晶体管的开关特性。5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术,

因而使动态损耗降低了约50%,另外,此类器件还在一个芯片 上集成了具有良好动态特性的续流二极管,从而以其独特的方式实现了晶闸管的低通态

压降、高阻断电压和晶体管稳定的开关特性有机结合.

IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展,给电力电子成套装置带来了新的飞跃。

 

>>>>>型号:5SHY4045L0001 3BHB018162R0001 集成栅极换流晶闸管

5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101.jpg

英文介绍

 

5SHY4045L0001 3BHB018162R0001 Integrated gate converter thyristor 

5SHY4045L0001 3BHB018162R0001 Integrated GTO chip with anti-parallel diode and gate driver 

circuit, and then connected with the gate driver in a low inductance mode at the periphery, combined

Due to the advantages of stable switching ability of transistor and low on-state loss of thyristor, the performance of thyristor is brought into play in on-stage, and the 

characteristics of transistor are presented in off-stage.

IGCT(Intergrated Gate Commutated Thyristors) is a new type of power semiconductor device used in large power electronics packages introduced in 1996. IGCT is a new 

type of power based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology

The semiconductor switching device has the on-state characteristics of a thyristor and the switching characteristics of a transistor. 5SHY4045L0001 3BHB018162R0001 

Due to the buffer structure and shallow emitter technology,

Thus, the dynamic loss is reduced by about 50%. In addition, such devices also integrate a continuous current diode with good dynamic characteristics on a chip, so as 

to achieve the low-pass state of the thyristor in its unique way

The voltage drop, high blocking voltage and stable switching characteristics of the transistor are combined.

IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.

>>>>>型号:5SHY4045L0001 3BHB018162R0001 集成栅极换流晶闸管






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