>>>>>型号:5SHX2645L0004 断路器
【功能描述】
5SHX2645L0004 是断路器。
5SHX2645L0004 是一款高品质断路器，设计用于各种应用。它以最高的质量和性能标准建造，确保即使在最苛刻的环境中也能可靠运行。
该断路器的额定电压为230/400V AC，额定电流为45，分断能力为10ka，杆数为31。
5SHX2645L0004技术说明
5SHX2645L0004的技术说明有：
缓冲层结构。在相同阻断电压下，硅片厚度和标准结构更薄，大大降低了导通和开关损耗，提高了器件的效率。
门极换流。借助集成门极电路实现的”门极换流”和”硬驱动”关断过程。
与二极管组合。将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，
在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。
5SHX2645L0004的特点有：
具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点。
制造成本低，成品率高，有很好的应用前景。
采用缓冲层结构后，在相同阻断电压下，硅片厚度和标准结构更薄，大大降低了导通和开关损耗，提高了器件的效率。
IGCT集成门极换流晶闸管是中压变频器开发的用于巨型电力电子成套装置中的新型电力半导体开关器件。
>>>>>型号:5SHX2645L0004 断路器
【英文介绍】
5SHX2645L0004 is a circuit breaker.
The 5SHX2645L0004 is a high quality circuit breaker designed for use in a variety of applications. It is built to the highest quality and performance standards,
ensuring reliable operation even in the most demanding environments. The circuit breaker has a rated voltage of 230/400V AC, a rated current of 45, a breaking capacity
of 10ka, and a bar number of 31.
5SHX2645L0004 Technical Description
Technical specifications of the 5SHX2645L0004 are:
Buffer layer structure. Under the same blocking voltage, the wafer thickness and standard structure are thinner, which greatly reduces the on-off and switching losses and
improves the efficiency of the device.
Gate commutation. "Gate commutation" and "hard drive" shut-off processes with integrated gate circuits.
Combined with diodes. The GTO chip is integrated with the anti-parallel diode and gate driver circuit, and then connected with the gate driver in a low inductance mode at
the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, the performance of the thyristor is played in
the on-stage, and the characteristics of the transistor are displayed in the off-stage.
5SHX2645L0004 features:
It has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure and low on-loss.
With low manufacturing cost and high yield, it has a good application prospect.
With the buffer layer structure, under the same blocking voltage, the wafer thickness and standard structure are thinner, which greatly reduces the on-off and on-off losses,
and improves the efficiency of the device.
IGCT integrated gate commutator thyristor is a new type of power semiconductor switching device developed by medium voltage inverter for large power electronics.
>>>>>型号:5SHX2645L0004 断路器
